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Journal of Nanophotonics

Strong broadband optical absorption in silicon nanowire films
Author(s): Loucas Tsakalakos; Joleyn E. Balch; Jody Fronheiser; Min-Yi Shih; Stephen F. LeBoeuf; Matthew Pietrzykowski; Peter J. Codella; Bas A. Korevaar; Oleg Sulima; James Rand; Anilkumar Davuluru; Umakant D. Rapol
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Paper Abstract

The broadband optical absorption properties of silicon nanowire (SiNW) films fabricated on glass substrates by wet etching and chemical vapor deposition (CVD) have been measured and found to be higher than solid thin films of equivalent thickness. The observed behavior is adequately explained by light scattering and light trapping though some of the observed absorption is due to a high density of surface states in the nanowires films, as evidenced by the partial reduction in high residual sub-bandgap absorption after hydrogen passivation. Finite difference time domain simulations show strong resonance within and between the nanowires in a vertically oriented array and describe the experimental absorption data well. These structures may be of interest in optical films and optoelectronic device applications.

Paper Details

Date Published: 1 July 2007
PDF: 10 pages
J. Nanophoton. 1(1) 013552 doi: 10.1117/1.2768999
Published in: Journal of Nanophotonics Volume 1, Issue 1
Show Author Affiliations
Loucas Tsakalakos, GE Global Research (United States)
Joleyn E. Balch, GE Global Research (United States)
Jody Fronheiser, GE Global Research (United States)
Min-Yi Shih, GE Global Research (United States)
Stephen F. LeBoeuf, GE Global Research (United States)
Matthew Pietrzykowski, GE Global Research (United States)
Peter J. Codella, GE Global Research (United States)
Bas A. Korevaar, GE Global Research (United States)
Oleg Sulima, GE Energy (USA) LLC (United States)
James Rand, GE Energy (USA) LLC (United States)
Anilkumar Davuluru, GE India Technology Ctr. Pvt. Ltd. (India)
Umakant D. Rapol, GE India Technology Ctr. Pvt. Ltd. (India)


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