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Journal of Nanophotonics

Design of photonic crystal directional couplers for electro-optical wavelength switching in Si technology
Author(s): Eric Cassan; Damien Bernier; Delphine Marris-Morini; Guillaume Maire; Laurent Vivien
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Paper Abstract

Electro-optical wavelength switch in Si technology operating around λ= 1.55 μm and based on a photonic crystal directional coupler configuration was studied using Plane Wave Method and Finite Difference Time Domain simulations. Owing to the exploitation of slow wave supermodes, ultra-compact active devices (~ 20 μm) exploiting free carrier plasma dispersion effect in Si can be designed. Injection of input/output strip access waveguides with the photonic core area is optimized using tapering stages to gradually reduce light group velocity. With carrier injection around 1018 cm-3, the coupler configuration can be used as an optical switch of individual wavelengths or a multiplexer/demultiplexer device with active routing of wavelengths.

Paper Details

Date Published: 1 July 2007
PDF: 10 pages
J. Nanophoton. 1(1) 013551 doi: 10.1117/1.2768383
Published in: Journal of Nanophotonics Volume 1, Issue 1
Show Author Affiliations
Eric Cassan, Univ. Paris-Sud II (France)
Damien Bernier, Univ. Paris-Sud II (France)
Delphine Marris-Morini, Univ. Paris-Sud II (France)
Guillaume Maire, Institut d'Optique (France)
Laurent Vivien, Univ. Paris-Sud II (France)

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