Share Email Print
cover

Journal of Micro/Nanolithography, MEMS, and MOEMS • Open Access

Defect reduction with special routing for immersion lithography

Paper Abstract

This letter reports record-breaking low defect counts for immersion lithography, the mechanism for formation of particle-printing defects, and for two new exposure routings to achieve the low defect counts. Both new routings make the slot-scan directions parallel to the field-stepping directions, whereas in the normal routing the two directions are perpendicular to each other. From experimental data, the average defect count for one of the special routings is 4.8 per wafer, while it is 19.7 per wafer for normal routing.

Paper Details

Date Published: 1 January 2007
PDF: 3 pages
J. Micro/Nanolith. 6(1) 010501 doi: 10.1117/1.2718941
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 6, Issue 1
Show Author Affiliations
Fu-Jye Liang, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Lin-Hung Shiu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chun-Kuang Chen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Li-Jui Chen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Tsai-Sheng Gau, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Burn J. Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)


© SPIE. Terms of Use
Back to Top