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Journal of Micro/Nanolithography, MEMS, and MOEMS

Effect of process parameters and packing density on dimensional errors for densely packed high-aspect-ratio SU-8 microstructures in x-ray lithography
Author(s): Kaushal Dhirendra Vora; Bor-Yuan Shew; Erol C. Harvey; J. P. Hayes; Andrew G. Peele
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Paper Abstract

X-ray lithographic conditions for high-aspect-ratio SU-8 resist structures are characterized for potential application in x-ray optics and bioMEMS. The effects of the main process parameters, such as exposure dose, postexposure bake, development time, and the packing density of the microfabricated features, on the increase in feature size at the top portion of the resist (as compared to that in masks) are investigated. We find that lower postexposure bake and exposure dose leads toward minimizing dimensional errors. Further improvements in reducing the dimensional errors can be achieved by overdeveloping the structures. Using overdevelopment, we demonstrate an improvement in dimensional error for a given structure from 5 to 3.3%.

Paper Details

Date Published: 1 January 2007
PDF: 5 pages
J. Micro/Nanolith. MEMS MOEMS 6(1) 013004 doi: 10.1117/1.2712869
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 6, Issue 1
Show Author Affiliations
Kaushal Dhirendra Vora, La Trobe Univ. (Australia)
Bor-Yuan Shew, National Synchrotron Radiation Research Ctr. (Taiwan)
Erol C. Harvey, Swinburne Univ. of Technology (Australia)
J. P. Hayes, Swinburne Univ. of Technology (Australia)
Andrew G. Peele, La Trobe Univ. (Australia)

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