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Journal of Micro/Nanolithography, MEMS, and MOEMS

Control of chemical residue on photomasks using thermal treatment
Author(s): Han-Byul Kang; Yong-Dae Kim; Jong-Min Kim; Hyun-Joon Cho; Moon-Hwan Choi; Sang-Soo Choi; Jee-Hwan Bae; Cheol-Woong Yang
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Paper Abstract

We choose thermal treatment as part of a methodology to remove chemical residue on the surface of a mask. This new step of thermal treatment is inserted into our standard cleaning process for embedded attenuate phase shift masks (EAPSMs). The treatment is carried out in a modified hot plate system at various temperatures and times. After thermal treatment, ion chromatography measures the residual ions on a given surface. The thermal treatment is found to considerably reduce residual sulfate ions on the mask surface. The remaining sulfate ions on the mask are <0.18 ng/cm2 using thermal treatment.

Paper Details

Date Published: 1 January 2007
PDF: 5 pages
J. Micro/Nanolith. 6(1) 013008 doi: 10.1117/1.2435715
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 6, Issue 1
Show Author Affiliations
Han-Byul Kang, PKL Co., Ltd. (South Korea)
Yong-Dae Kim, PKL Co., Ltd. (South Korea)
Jong-Min Kim, PKL Co., Ltd. (South Korea)
Hyun-Joon Cho, PKL Co., Ltd. (South Korea)
Moon-Hwan Choi, PKL Co., Ltd. (South Korea)
Sang-Soo Choi, PKL Co., Ltd. (South Korea)
Jee-Hwan Bae, Sungkyunkwan Univ. (South Korea)
Cheol-Woong Yang, Sungkyunkwan Univ. (South Korea)


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