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Optical Engineering

Estimation of the composition of Si1-x-yGexCy layers on Si for photodetection at 1.3 and 1.55 μm
Author(s): Bratati Mukhopadhyay; Sumitra Ghosh; P. K. Basu
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Paper Abstract

We explore the possibility of using ternary Si1-x-yGexCy grown on Si as the material for detection of infrared light of wavelengths 1.3 µm and 1.55 μm. By using an empirical expression for the absorption coefficient α, it is ensured that the ternary alloy exhibits values of α as high as 5000 cm-1 at these wavelengths. From the corresponding values of the band gap, the compositions of the alloy are then ascertained by using an existing theory of band gap and band offset of ternary SiGeC alloy grown on (001) oriented Si. The estimated compositions are displayed as plots of x versus y ( ≤0.03) with different values of α as parameters.

Paper Details

Date Published: 1 January 2007
PDF: 7 pages
Opt. Eng. 46(1) 014001 doi: 10.1117/1.2431347
Published in: Optical Engineering Volume 46, Issue 1
Show Author Affiliations
Bratati Mukhopadhyay, Univ. of Calcutta (India)
Sumitra Ghosh, Univ. of Calcutta (India)
P. K. Basu, Univ. of Calcutta (India)


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