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Optical Engineering

Effect of Ge-composition on the frequency response of a Si/Si1-yGey P-i-N photodetector
Author(s): Mukul K. Das; N. R. Das
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Paper Abstract

The effect of Ge-composition on the transit-time limited frequency response of a vertical Si/Si1?yGey P-i-N photodetector has been investigated. The change in Ge-content (y) causes the changes in properties of the SiGe layer and the Si/SiGe interfaces and, hence, affects the transit time of carriers in the Si/SiGe photodetector. The results obtained from the analysis show that at low bias, the bandwidth of the photodetector initially increases with increase in Ge-content, but after an optimum value of Ge-content, the bandwidth starts decreasing. This optimum value increases with increase in applied bias.

Paper Details

Date Published: 1 December 2006
PDF: 6 pages
Opt. Eng. 45(12) 124001 doi: 10.1117/1.2403869
Published in: Optical Engineering Volume 45, Issue 12
Show Author Affiliations
Mukul K. Das, Univ. of Calcutta (India)
N. R. Das, Univ. of Calcutta (India)

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