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Journal of Micro/Nanolithography, MEMS, and MOEMS

Evaluation of producer's and consumer's risks in scatterometry and scanning electron microscopy metrology for inline critical dimension metrology
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Paper Abstract

Measurement characteristics in scatterometry and critical dimension–scanning electron microscopy (CD-SEM) for lot acceptance sampling of inline CD metrology were investigated by using a statistical approach with Monte Carlo simulation. By operation characteristics curve analysis, producer's risk and consumer's risk arising from sampling were clarified. Single use of scatterometry involves a higher risk, such risk being particularly acute in the case of large intrachip CD variation because it is unable to sufficiently monitor intrachip CD variation including local CD error. Substituting scatterometry for conventional SEM metrology is accompanied with risks, resulting in the increase of unnecessary cost. The combined use of scatterometry and SEM metrology in which the sampling plan for SEM is controlled by scatterometry is a promising metrology from the viewpoint of the suppression of risks and cost. This is due to the effect that CD errors existing in the distribution tails are efficiently caught.

Paper Details

Date Published: 1 October 2006
PDF: 14 pages
J. Micro/Nanolith. 5(4) 043006 doi: 10.1117/1.2397034
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 5, Issue 4
Show Author Affiliations
Masafumi Asano, Toshiba Corp. (Japan)
Takahiro Ikeda, Toshiba Corp. (Japan)
Toru Koike, Toshiba Corp. (Japan)
Hideaki Abe, Toshiba Corp. (Japan)


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