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Journal of Micro/Nanolithography, MEMS, and MOEMS

Sober view on extreme ultraviolet lithography
Author(s): Burn J. Lin
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Paper Abstract

EUV lithography has been widely regarded as the lithography technology to succeed optical lithography since the 100-nm era. With the ending of 193-nm immersion lithography in sight, the need for a successor cannot be more urgent. We deal quantitatively with various critical aspects of EUV lithography such as source and power requirement, mask specification, random phase shifting, oblique incidence, reflective projection optics, and resist, to compile a list of the critical issues and to determine the most critical ones to make the technology a success.

Paper Details

Date Published: 1 July 2006
PDF: 12 pages
J. Micro/Nanolith. MEMS MOEMS 5(3) 033005 doi: 10.1117/1.2358112
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 5, Issue 3
Show Author Affiliations
Burn J. Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)

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