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Optical Engineering • Open Access

Unselective regrowth of 1.5-µm InGaAsP multiple-quantum-well distributed-feedback buried heterostructure lasers
Author(s): Wen Feng; Y. Ding; Jiaoqing Pan; Lingjuan Zhao; Hongliang Zhu; Wei Wang

Paper Abstract

Unselective regrowth for fabricating 1.5-µm InGaAsP multiple-quantum well (MQW) distributed-feedback (DFB) buried heterostructure (BH) lasers is developed. The experimental results exhibit superior characteristics, such as a low threshold of 8.5 mA, high slope efficiency of 0.55 mW/mA, circular-like far-field patterns, the narrow linewidth of 2.5 MHz, etc. The high performance of the devices effectively proves the feasibility of the new method to fabricate buried heterostructure lasers.

Paper Details

Date Published: 1 September 2006
PDF: 3 pages
Opt. Eng. 45(9) 090501 doi: 10.1117/1.2355658
Published in: Optical Engineering Volume 45, Issue 9
Show Author Affiliations
Wen Feng, Institute of Semiconductors (China)
Y. Ding, Hokkaido Univ. (Japan)
Jiaoqing Pan, Institute of Semiconductors (China)
Lingjuan Zhao, Institute of Semiconductors (China)
Hongliang Zhu, Institute of Semiconductors (China)
Wei Wang, Institute of Semiconductors (China)


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