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Journal of Micro/Nanolithography, MEMS, and MOEMS

Spectral analysis of line width roughness and its application to immersion lithography
Author(s): Gian F. Lorusso; Leonardus Hendrikus Albertino Leunissen; Monique Ercken; Christie Delvaux; Frieda Van Roey; Nadia Vandenbroeck; H. Yang; Amir R. Azordegan; Tony DiBiase
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Paper Abstract

Various approaches can be used to quantify line width roughness (LWR). One of the most commonly used estimators of LWR is standard deviation σ. However, a substantial amount of information is ignored if only σ is measured. We use an automated approach to investigate LWR, where standard deviation, correlation length, and power spectrum are measured online on critical dimension scanning electron microscopes. This methodology is used to monitor LWR, investigate the effect of LWR on critical dimension precision, and to benchmark new resists for immersion lithography. Our results indicate that online LWR metrology is a critical tool in a variety of applications, including but not restricted to process control.

Paper Details

Date Published: 1 July 2006
PDF: 6 pages
J. Micro/Nanolith. MEMS MOEMS 5(3) 033003 doi: 10.1117/1.2242982
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 5, Issue 3
Show Author Affiliations
Gian F. Lorusso, IMEC (Belgium)
Leonardus Hendrikus Albertino Leunissen, IMEC (Belgium)
Monique Ercken, IMEC (Belgium)
Christie Delvaux, IMEC (Belgium)
Frieda Van Roey, IMEC (Belgium)
Nadia Vandenbroeck, IMEC (Belgium)
H. Yang, KLA-Tencor Corp. (United States)
Amir R. Azordegan, KLA-Tencor Corp. (United States)
Tony DiBiase, KLA-Tencor Corp. (United States)

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