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Optical Engineering

Modeling of the temperature-dependent spectral response of In1–χGaχSb infrared photodetectors
Author(s): Juan A. González-Cuevas; Tamer F. Refaat; M. Nurul Abedin; Hani E. Elsayed-Ali
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Paper Abstract

A model of the spectral responsivity of In1–χGaχSb p-n junction infrared photodetectors is developed. This model is based on calculations of the photogenerated and diffusion currents in the device. Expressions for the carrier mobilities, absorption coefficient, and normal-incidence reflectivity as a function of temperature are derived from extensions made to Adachi and Caughey-Thomas models. Contributions from the Auger recombination mechanism, which increase with a rise in temperature, are also considered. The responsivity is evaluated for different doping levels, diffusion depths, operating temperatures, and photon energies. Parameters calculated from the model are compared with available experimental data, and good agreement is obtained. These theoretical calculations help us to better understand the electro-optical behavior of In1–χGaχSb photodetectors, and can be utilized for performance enhancement through optimization of the device structure.

Paper Details

Date Published: 1 April 2006
PDF: 8 pages
Opt. Eng. 45(4) 044001 doi: 10.1117/1.2192772
Published in: Optical Engineering Volume 45, Issue 4
Show Author Affiliations
Juan A. González-Cuevas, Old Dominion Univ. (United States)
Tamer F. Refaat, NASA Langley Research Ctr. (United States)
M. Nurul Abedin, NASA Langley Research Ctr. (United States)
Hani E. Elsayed-Ali, Old Dominion Univ. (United States)


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