Share Email Print

Optical Engineering

High-power AlGaInP laser diodes with current-injection-free region near the laser facet
Author(s): Yun Xu; Yuzhang Li; Qiaoqiang Gan; Qing Cao; Guofeng Song; Liang Guo; Lianghui Chen
Format Member Price Non-Member Price
PDF $20.00 $25.00

Paper Abstract

A high-power AlGaInP laser diode with current-injection-free region near the facet is successfully fabricated by metaorganic chemical vapor deposition (MOCVD) using the (100) direction n-GaAs substrates with a misorientation of 15 deg toward the (011) direction. The maximum continuous wave output power is about 90 mW for the traditional structure. In comparison, the maximum output power is enhanced by about 67%, and achieves 150 mW for LDs with current-infection-free regions. The fundamental transverse-mode operation is obtained up to 70 mW. Output characteristics at high temperatures are also improved greatly for an LD with a current-injection-free region, and the highest operation temperature is 70 °C at 50 mW without kink. The threshold current is about 33 mA, the operation current and the slope efficiency at 100 mW are 120 mA and 0.9 mW/mA, respectively. The lasing wavelength is 658.4 nm at room-temperature 50 mW.

Paper Details

Date Published: 1 March 2006
PDF: 3 pages
Opt. Eng. 45(3) 034205 doi: 10.1117/1.2185567
Published in: Optical Engineering Volume 45, Issue 3
Show Author Affiliations
Yun Xu, Institute of Semiconductors (China)
Yuzhang Li, Institute of Semiconductors (China)
Qiaoqiang Gan, Institute of Semiconductors (China)
Qing Cao, Institute of Semiconductors (China)
Guofeng Song, Institute of Semiconductors (China)
Liang Guo, Institute of Semiconductors (China)
Lianghui Chen, Institute of Semiconductors (China)

© SPIE. Terms of Use
Back to Top