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Journal of Micro/Nanolithography, MEMS, and MOEMS

Evaluation of the multistep generated wafer alignment mark to overcome chemical mechanical polishing problems
Author(s): SangMan Bae; Moon-Hee Lee
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Paper Abstract

We develop a new method to improve alignment accuracy. Specially designed two-step wafer alignment marks are evaluated for laser scan alignment to enhance wafer alignment. Wafer alignment accuracy data shows that it is enough to execute wafer alignment without failures in spite of the coarse chemical mechanical polishing (CMP) process. Effective detection of a wafer alignment mark leads to enhancement of product quality and could reduce the process time of the lithography step. It is a useful technique for thick metalization films and the planarity of high topography. A coarse metrology wafer with a CMP process can degrade the wafer alignment process. We try deep trench profiles and the clear structures of modified marks using additional photomask processing.

Paper Details

Date Published: 1 January 2006
PDF: 4 pages
J. Micro/Nanolith. 5(1) 013006 doi: 10.1117/1.2168461
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 5, Issue 1
Show Author Affiliations
SangMan Bae, Hynix Semiconductor Inc. (South Korea)
Moon-Hee Lee, Univ. of Suwon (South Korea)

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