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Optical Engineering

Electro-optic modulator based on Si2N2O substrate
Author(s): Jiusheng Li; Sailing He
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Paper Abstract

We propose a novel Z-cut lithium niobate electro-optic modulator based on a Si2N2O substrate. The structure is analyzed using the finite element method. The novel modulator with 3-dB optical bandwidth, half-wave voltage, and characteristic impedance at 1.5-µm wavelength are 120 GHz, 3.5 V and 50.2, respectively. The simulation results show that the modulator can achieve wide bandwidth, low half-wave voltage, and a good impedance match. The modulator has good potential for high-speed optical transmission systems.

Paper Details

Date Published: 1 January 2006
PDF: 4 pages
Opt. Eng. 45(1) 014603 doi: 10.1117/1.2155483
Published in: Optical Engineering Volume 45, Issue 1
Show Author Affiliations
Jiusheng Li, Zhejiang Univ. (China)
Sailing He, Kungliga Tekniska Högskolan (Sweden)

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