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Optical Engineering • Open Access

Sb-based two-color photodetector fabrication and characterization
Author(s): Tamer F. Refaat; M. Nurul Abedin; Ishwara B. Bhat; Yegao Xiao

Paper Abstract

Sb-based dual-band detectors were fabricated and characterized. The first band consists of an InGaAsSb pn junction for long wavelength detection, while the second band consists of a GaSb pn junction for shorter wavelength detection. Both bands were grown, lattice-matched to a GaSb substrate, using metal-organic vapor phase epitaxy. Three metal contacts were deposited to access the individual junctions. Spectral response measurements indicated either independent operation of both detectors simultaneously, or bias selective operation for one detector while serially accessing both devices.

Paper Details

Date Published: 1 December 2005
PDF: 3 pages
Opt. Eng. 44(12) 120501 doi: 10.1117/1.2147576
Published in: Optical Engineering Volume 44, Issue 12
Show Author Affiliations
Tamer F. Refaat, NASA Langley Research Ctr. (United States)
M. Nurul Abedin, NASA Langley Research Ctr. (United States)
Ishwara B. Bhat, Rensselaer Polytechnic Institute (United States)
Yegao Xiao, Rensselaer Polytechnic Institute (United States)

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