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Journal of Micro/Nanolithography, MEMS, and MOEMS

Thin-film optimization strategy in high numerical aperture optical lithography, part 1: principles
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Paper Abstract

The functional dependence of a resist critical dimension (CD) with respect to resist thickness for a general absorptive thin-film stack in the case of oblique incidence is derived analytically with the rigorous electromagnetic theory. Based on obtained results, we discuss those thin-film effects related to CD control, such as the swing effect, bulk effect, etc., especially in the regime of high numerical aperture optical lithography.

Paper Details

Date Published: 1 October 2005
PDF: 11 pages
J. Micro/Nanolith. 4(4) 043003 doi: 10.1117/1.2137967
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 4, Issue 4
Show Author Affiliations
Shinn-Sheng Yu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Burn Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Anthony Yen, Cymer, Inc. (United States)
Chih-Ming Ke, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Te-Chih Huang, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Bang-Chein Ho, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chun-Kuang Chen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Tsai-Sheng Gau, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Hung-Chang Hsieh, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Yao-Ching Ku, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)


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