Share Email Print

Optical Engineering

Beveled sidewall formation and its effect on the light output of a GaInN multiquantum well light-emitting diode with sapphire substrate
Author(s): Jung-Tsung Hsu; W. Y. Yeh; ChangCheng Chuo; Jenq-Dar Tsay; C. S. Huang; C. Y. Lin
Format Member Price Non-Member Price
PDF $20.00 $25.00

Paper Abstract

In this research, experiments and optical simulations are carried out to study the effect of beveled sidewalls and geometric shapes on the light extraction efficiency of a GaN light-emitting diode (LED) with sapphire substrate. In addition to the conventional rectangular chips, hexagonal chips are experimentally processed for the first time on a novel island-like GaN substrate, on which the beveled sidewalls are naturally formed at each island during GaN epitaxial growth on a sapphire original substrate by hydride vapor phase epitaxy (HVPE) technology. The results from our simulations and experiments show that the output power of a LED with beveled sidewalls is about two times that of a normal LED, and those from hexagonal chips are always better than those from conventional rectangular chips.

Paper Details

Date Published: 1 November 2005
PDF: 4 pages
Opt. Eng. 44(11) 111304 doi: 10.1117/1.2131049
Published in: Optical Engineering Volume 44, Issue 11
Show Author Affiliations
Jung-Tsung Hsu, Industrial Technology Research Institute (Taiwan)
W. Y. Yeh, Industrial Technology Research Institute (Taiwan)
ChangCheng Chuo, Industrial Technology Research Institute (Taiwan)
Jenq-Dar Tsay, Industrial Technology Research Institute (Taiwan)
C. S. Huang, Industrial Technology Research Institute (Taiwan)
C. Y. Lin, Industrial Technology Research Institute (Taiwan)

© SPIE. Terms of Use
Back to Top