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Journal of Micro/Nanolithography, MEMS, and MOEMS

Design and fabrication of a miniaturized bulk acoustic filter by high aspect ratio etching
Author(s): Chung-Hsien Lin; Hong-Ren Chen; Weileun Fang
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Paper Abstract

A 2.45-GHz filter is fabricated by thin film bulk acoustic wave resonator (FBAR) technology. It is designed to minimize die size and simplify the fabrication process simultaneously by using inductive coupling plasma etching. The quality factor of a fabricated single resonator is 1567 and the electromechanical coupling coefficient is 5.7%. The fabricated filter has minimum insertion loss around 1.5 dB and maximum insertion loss at 3.6 dB in 83.5-MHz bandwidth, which is suitable for WLAN and Bluetooth applications.

Paper Details

Date Published: 1 July 2005
PDF: 7 pages
J. Micro/Nanolith. MEMS MOEMS 4(3) 033010 doi: 10.1117/1.2037387
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 4, Issue 3
Show Author Affiliations
Chung-Hsien Lin, National Tsing Hua Univ. (Taiwan)
Hong-Ren Chen, Asia Pacific Microsystems, Inc. (Taiwan)
Weileun Fang, National Tsing Hua Univ. (Taiwan)

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