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Optical Engineering

Photon emission characteristics of avalanche photodiodes
Author(s): Tao Huang; Junhu Shao; Xiaobo Wang; Liantuan Xiao; Suotang Jia
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Paper Abstract

Temporal decay of photon emission from avalanche photodiodes (APDs) is demonstrated. The steep rise of the reverse voltage can cause a higher probability of photon emission. For a silicon avalanche photodiode, the photon emission has a broad spectral distribution from 500 to 1100 nm with two peaks at 750 and 994 nm, respectively. The number of emitted photons increases by 44 Mcount/(s mA sr) as the APD's reverse current increases. This suggests that the reverse current, instead of the reverse voltage, applied to the APD is the main determinant of the photon emission. It is furthermore shown that the distribution of the photon emission is a super-Poisson distribution.

Paper Details

Date Published: 1 July 2005
PDF: 4 pages
Opt. Eng. 44(7) 074001 doi: 10.1117/1.1950087
Published in: Optical Engineering Volume 44, Issue 7
Show Author Affiliations
Tao Huang, Shanxi Univ. (China)
Junhu Shao, Shanxi Univ. (China)
Xiaobo Wang, Shanxi Univ. (China)
Liantuan Xiao, Shanxi Univ. (China)
Suotang Jia, Shanxi Univ. (China)

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