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Optical Engineering

Integration of germanium waveguide photodetectors for intrachip optical interconnects
Author(s): Mathieu Rouviere; Mathieu Halbwax; Jean-Luc Cercus; Eric Cassan; Laurent Vivien; Daniel Pascal; Michel Heitzmann; Jean-Michel Hartmann; Suzanne Laval
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Paper Abstract

The main characteristics of germanium photodetectors integrated in silicon-on-insulator optical waveguides for intrachip optical interconnects are presented. The epitaxial Ge layers are grown on Si(001) by reduced-pressure chemical vapor deposition. The optical absorption of Ge layers is recorded from 1.2 to 1.7 µm and linked to the layer strain. The responsivity of an interdigitated metal-semiconductor-metal Ge photodetector has been measured. Light coupling from a slightly etched submicron rib silicon-on-insulator waveguide to a Ge photodetector is studied for two configurations: butt coupling and vertical coupling.

Paper Details

Date Published: 1 July 2005
PDF: 5 pages
Opt. Eng. 44(7) 075402 doi: 10.1117/1.1950067
Published in: Optical Engineering Volume 44, Issue 7
Show Author Affiliations
Mathieu Rouviere, Univ. Paris-Sud II (France)
Mathieu Halbwax, Univ. Paris-Sud II (France)
Jean-Luc Cercus, Univ. Paris-Sud II (France)
Eric Cassan, Univ. Paris-Sud II (France)
Laurent Vivien, Univ. Paris-Sud II (France)
Daniel Pascal, Univ. Paris-Sud II (France)
Michel Heitzmann, Commissariat à l'Energie Atomique (France)
Jean-Michel Hartmann, CEA Grenoble (France)
Suzanne Laval, Univ. Paris-Sud II (France)

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