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Optical Engineering

Read-only memory disk with AgOx and AgInSbTe superresolution mask layer
Author(s): Feng Zhang; Yang Wang; Wendong Xu; Fuxi Gan
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Paper Abstract

Two novel read-only memory (ROM) disks, one with an AgOx mask layer and the other with an AgInSbTe mask layer, are proposed and studied. The AgOx and the AgInSbTe films sputtered on the premastered substrates with pit depths of 50 nm and pit lengths (space) of 380 nm are studied by atomic force microscopy. Disk readout measurement is carried out using a dynamic setup with a laser wavelength of 632.8 nm and an object lens numerical aperture (NA) of 0.40. Results show that the superresolution effect happens only at a suitable oxygen flow ratio for the AgOx ROM disk. The best superresolution readout effect is achieved at an oxygen flow ratio of 0.5 with the smoothest film surface. Compared with the AgOx ROM disk, the AgInSbTe ROM disk has a much smoother film surface and better superresolution effect. A carrier-to-noise ratio (CNR) of above 40 dB can be obtained at an appropriate readout power and readout velocity. The readout CNR of both the AgOx and AgInSbTe ROM disks have a nonlinear dependence on the readout power. The superresolution readout mechanisms for these ROM disks are analyzed and compared as well.

Paper Details

Date Published: 1 June 2005
PDF: 5 pages
Opt. Eng. 44(6) 065202 doi: 10.1117/1.1925567
Published in: Optical Engineering Volume 44, Issue 6
Show Author Affiliations
Feng Zhang, Shanghai Institute of Optics and Fine Mechanics (China)
Yang Wang, Shanghai Institute of Optics and Fine Mechanics (China)
Wendong Xu, Shanghai Institute of Optics and Fine Mechanics (China)
Fuxi Gan, Shanghai Institute of Optics and Fine Mechanics (China)

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