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Optical Engineering

Influence of chlorine on etched sidewalls in chemically assisted ion beam etching with SU-8 as mask
Author(s): Lin Pang; Chiagho Tsai; Yeshaiahu Fainman
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Paper Abstract

A thin layer of SU-8 submicron pattern produced by holographic lithography is used as the dry etch mask in a chemically assisted ion beam etching (CAIBE) system. The effect of the chlorine gas flow rate on etched sidewalls is investigated; by matching the lateral etch rate and the deposition rate, etching selectivity of up to 7:1 is achieved, rendering smooth vertical sidewalls and damage-free upper portions for the etched structure.

Paper Details

Date Published: 1 June 2005
PDF: 4 pages
Opt. Eng. 44(6) 063401 doi: 10.1117/1.1923007
Published in: Optical Engineering Volume 44, Issue 6
Show Author Affiliations
Lin Pang, Univ. of California/San Diego (United States)
Chiagho Tsai, Univ. of California/San Diego (United States)
Yeshaiahu Fainman, Univ. of California/San Diego (United States)


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