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Optical Engineering

Fabrication of Ge/Si quantum-dot infrared photodetector by pulsed laser deposition
Author(s): Mohammed S. Hegazy; Tamer F. Refaat; M. Nurul Abedin; Hani E. Elsayed-Ali
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Paper Abstract

A multilayered infrared Ge/Si quantum-dot photodetector is fabricated by pulsed laser deposition. Forty successive Ge quantum dot layers, each covered with a thin Si layer, are deposited. Deposition is monitored by in situ reflection high-energy electron diffraction and the morphology is further studied by ex situ atomic force microscopy. Current-voltage measurements reveal typical diode characteristics, while responsivity measurements show an absorption peak around a 2-μm wavelength

Paper Details

Date Published: 1 May 2005
PDF: 3 pages
Opt. Eng. 44(5) 059702 doi: 10.1117/1.1907563
Published in: Optical Engineering Volume 44, Issue 5
Show Author Affiliations
Mohammed S. Hegazy, Old Dominion Univ. (United States)
Tamer F. Refaat, Science and Technology Corp. (United States)
M. Nurul Abedin, NASA Langley Research Ctr. (United States)
Hani E. Elsayed-Ali, Old Dominion Univ. (United States)


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