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Optical Engineering

Picosecond high-repetition-rate pulsed laser ablation of dielectrics: the effect of energy accumulation between pulses
Author(s): Barry Luther-Davies; Andrei V. Rode; Nathan R. Madsen; Eugene G. Gamaly
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Paper Abstract

We report experiments on the ablation of arsenic trisulphide and silicon using high-repetition-rate (megahertz) trains of picosecond pulses. In the case of arsenic trisulphide, the average single pulse fluence at ablation threshold is found to be >100 times lower when pulses are delivered as a 76-MHz train compared with the case of a solitary pulse. For silicon, however, the threshold for a 4.1-MHz train equals the value for a solitary pulse. A model of irradiation by high-repetition-rate pulse trains demonstrates that for arsenic trisulphide energy accumulates in the target surface from several hundred successive pulses, lowering the ablation threshold and causing a change from the laser-solid to laser-plasma mode as the surface temperature increases.

Paper Details

Date Published: 1 May 2005
PDF: 8 pages
Opt. Eng. 44(5) 051102 doi: 10.1117/1.1905363
Published in: Optical Engineering Volume 44, Issue 5
Show Author Affiliations
Barry Luther-Davies, The Australian National Univ. (Australia)
Andrei V. Rode, The Australian National Univ. (Australia)
Nathan R. Madsen, The Australian National Univ. (Australia)
Eugene G. Gamaly, The Australian National Univ. (Australia)

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