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Journal of Micro/Nanolithography, MEMS, and MOEMS

New resists for nanometer scale patterning by extreme ultraviolet lithography
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Paper Abstract

The goal of nanofabrication capabilities that can routinely achieve dimensions of less than 32 nm will require the design of new photopolymers and strategies using wavelengths as short as 13 nm [extreme ultraviolet (EUV)]. Although EUV lithography is a challenging emerging technology that has proven its feasibility to smaller image features, yet it still requires novel photoresists. This communication discusses developments in the synthesis and lithographic performance of positive chemically amplified photoresists incorporating hydroxystyrene and a bulky adamantly protecting group. The incorporation of an ionic PAG unit, phenyl methacrylate dimethysulfonium triflate (PAG), in the resist backbone showed increased sensitivity compared with the analogous blend PAG resist samples. Sub-50 nm patterns were obtained upon extreme UV exposure on ultrathin single layer resist films of the newly synthesized polymer bound PAG resist, poly (4-hydroxystyrene-co-2-ethyl-2-adamantyl methacrylate-co-PAG).

Paper Details

Date Published: 1 April 2005
PDF: 6 pages
J. Micro/Nanolith. MEMS MOEMS 4(2) 029701 doi: 10.1117/1.1898604
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 4, Issue 2
Show Author Affiliations
Kenneth Emmanuel Gonsalves, Univ. of North Carolina/Charlotte (United States)
Muthiah Thiyagarajan, Univ. of North Carolina/Charlotte (United States)
Kim R. Dean, SEMATECH, Inc. (United States)

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