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Optical Engineering

Optical properties of amorphous silicon germanium obtained by low-frequency plasma-enhanced chemical vapor deposition from SiH4+GeF4 and from SiH4+GeH4
Author(s): Arllene Mariana Perez; Carlos Zuniga; Francisco Renero Carrillo; Alfonso Jacome Torres
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Paper Abstract

Amorphous silicon germanium (a-Si1–xGex) thin films are prepared by low-frequency plasma-enhanced chemical vapor deposition (LF PECVD) on glass substrates, from SiH4+GeF4 and SiH4+GeH4. These films are deposited under capacitive discharge during 60 min, at a frequency of 110 kHz, substrate temperature of 300°C, pressure of 0.6 Torr, and power of 350 W. The germanium gas mixture composition, determined by XGe=[GeF4]([GeH4])/[SiH4]+[GeF4]([GeH4]), is varied from 0 to 1. These films are deposited from a (1–XGe)SiH4+(XGe)GeF4(GeH4) mixture, with H2 dilution. The refractive index n and absorption coefficient α are determined from transmission spectra. The optical energy gap is also determined. The influence of gas sources on the optical parameters is discussed.

Paper Details

Date Published: 1 April 2005
PDF: 5 pages
Opt. Eng. 44(4) 043801 doi: 10.1117/1.1883698
Published in: Optical Engineering Volume 44, Issue 4
Show Author Affiliations
Arllene Mariana Perez, Instituto Nacional de Astrofísica, Óptica y Electrónica (Mexico)
Carlos Zuniga, Instituto Nacional de Astrofísica, Óptica y Electrónica (Mexico)
Francisco Renero Carrillo, Instituto Nacional de Astrofísica, Óptica y Electrónica (Mexico)
Alfonso Jacome Torres, Instituto Nacional de Astrofísica, Óptica y Electrónica (Mexico)


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