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Journal of Micro/Nanolithography, MEMS, and MOEMS

Overbake and resist formulation: improved depth of focus and small line printing
Author(s): David Van Steenwinckel; Makoto Shimizu; Jeroen H. Lammers
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Paper Abstract

We previously [Van Steenwinckel and Lammers, Proc. SPIE 5039, 225-239 (2003)] showed that resist effects induced by "overbaking" (enhanced processing) can lead to major improvements in depth of focus and small-line printing capability through improved acid dose contrasts and a balanced optimization of acid diffusion in the presence of quencher. We show how a similar optimization can be attained by changes in resist formulation and how these changes can have a comparable positive impact on ultimate resolution and depth of focus. The formulation changes that are discussed follow the guidelines of the compact resist model that accounts for the overbake performance. The impact of the proposed resist reformulation on line-end shortening, line-edge roughness, and post exposure bake (PEB) sensitivity is discussed as well. The outcome of this work can be used to define which changes to the resist formulation offer the most beneficial improvements in the overall lithography process for printing resist features of 65 nm and smaller using ArF lithography and binary masks.

Paper Details

Date Published: 1 January 2005
PDF: 8 pages
J. Micro/Nanolith. 4(1) 013005 doi: 10.1117/1.1858491
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 4, Issue 1
Show Author Affiliations
David Van Steenwinckel, Philips Research Leuven (Belgium)
Makoto Shimizu, JSR Corp. (Belgium)
Jeroen H. Lammers, Philips Research Leuven (Belgium)


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