Share Email Print

Optical Engineering

Photoacoustic investigation of intrinsic and extrinsic Si
Author(s): Sajan D. George; B. Aneesh Kumar; Periasamy Radhakrishnan; V. P.N. Nampoori; C. P. Girija Vallabhan
Format Member Price Non-Member Price
PDF $20.00 $25.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

An open-cell configuration of the photoacoustic (PA) technique is employed to determine the thermal and transport properties of intrinsic Si and Si doped with B (p-type) and P (n-type). The experimentally obtained phase of the PA signal under heat transmission configuration is fitted to that of theoretical model by taking thermal and transport properties, namely, thermal diffusivity, diffusion coefficient, and surface recombination velocity, as adjustable parameters. It is seen from the analysis that doping and also the nature of dopant have a strong influence on the thermal and transport properties of semiconductors. The results are interpreted in terms of the carrier-assisted and phonon-assisted heat transfer mechanisms in semiconductors as well as the various scattering processes occurring in the propagation of heat carriers.

Paper Details

Date Published: 1 December 2004
PDF: 5 pages
Opt. Eng. 43(12) doi: 10.1117/1.1814357
Published in: Optical Engineering Volume 43, Issue 12
Show Author Affiliations
Sajan D. George, Cochin Univ. of Science & Technology (India)
B. Aneesh Kumar, Cochin Univ. of Science and Technology (India)
Periasamy Radhakrishnan, Cochin Univ. of Science & Technology (India)
V. P.N. Nampoori, Cochin Univ. of Science & Technology (India)
C. P. Girija Vallabhan, Cochin Univ. of Science & Technology (India)

© SPIE. Terms of Use
Back to Top