Share Email Print
cover

Journal of Micro/Nanolithography, MEMS, and MOEMS

Candidate plasma-facing materials for extreme ultraviolet lithography source components
Author(s): Ahmed Hassanein; Tatiana A. Burtseva; Jeffrey N. Brooks; Isak K. Konkashbaev; Bryan J. Rice
Format Member Price Non-Member Price
PDF $20.00 $25.00

Paper Abstract

Material selection and lifetime issues for extreme ultraviolet (EUV) lithography are of critical importance to the success of this technology for commercial applications. This work reviews current trends in production and use of plasma-facing electrodes, insulators, and wall materials for EUV-type sources. Ideal candidate materials should be able to: withstand high thermal shock from the short pulsed plasma; withstand high thermal loads without structural failure; reduce debris generation during discharge; and be machined accurately. We reviewed the literature on current and proposed fusion plasma-facing materials as well as current experience with plasma gun and other simulation devices. Both fusion and EUV source materials involve issues of surface erosion by particle sputtering and heat-induced evaporation/melting. These materials are either bare structural materials or surface coatings. EUV materials can be divided into four categories: wall, electrode, optical, and insulator materials. For electric discharge sources, all four types are required, whereas laser-produced plasma EUV sources do not require electrode and insulator materials. Several types of candidate alloy and other materials and methods of manufacture are recommended for each component of EUV lithography light sources.

Paper Details

Date Published: 1 October 2004
PDF: 8 pages
J. Micro/Nanolith. 3(4) doi: 10.1117/1.1793153
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 3, Issue 4
Show Author Affiliations
Ahmed Hassanein, Argonne National Lab. (United States)
Tatiana A. Burtseva, Argonne National Lab. (United States)
Jeffrey N. Brooks, Argonne National Lab. (United States)
Isak K. Konkashbaev, Argonne National Lab. (United States)
Bryan J. Rice, Intel Corp. (United States)


© SPIE. Terms of Use
Back to Top