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Journal of Micro/Nanolithography, MEMS, and MOEMS

Fabrication of a novel vacuum microelectronic pressure sensor
Author(s): Zhi-yu Wen; Zhongquan Wen; Gang Chen; Xiaolan Wang
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Paper Abstract

By combining silicon dry corrosion, wet corrosion, oxidizing sharpening and vacuum bonding techniques, and the theoretic calculation of elastic membranes and the distance from the catelectrode to the anode, a novel vacuum microelectronic pressure senor with overload protection is developed. The density of the field emission catelectrode array is about 24,000/mm2. The starting emission voltage is 0.5 to 1.5 V; backward voltage is higher than 25 V. When the forward voltage is 5 V, pressure sensitivity is 30.1 mV/kPa. The temperature error is 0.5% between 20 and 122°C.

Paper Details

Date Published: 1 October 2004
PDF: 5 pages
J. Micro/Nanolith. 3(4) doi: 10.1117/1.1792651
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 3, Issue 4
Show Author Affiliations
Zhi-yu Wen, Chongqing Univ. (China)
Zhongquan Wen, Chongqing Univ. (China)
Gang Chen, Chongqing Univ. (China)
Xiaolan Wang, Chongqing Univ. (China)

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