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Optical Engineering

Broadband polarization-insensitive semiconductor optical amplifier gate with tensile InGaAs quasi-bulk and compressively strained InGaAs wells
Author(s): Shurong Wang; Hongliang Zhu; Baojun Wang; Zhihong Liu; Ying Ding; Lingjuan Zhao; Fan Zhou; Lufeng Wang; Wei Wang
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Paper Abstract

A novel wideband polarization-insensitive semiconductor optical amplifier (SOA) gate containing compressively strained InGaAs quantum wells and tensile-strained InGaAs quasi-bulk layers is developed. The fabricated SOA gates have a wide 3-dB optical bandwidth of 102 nm, less than 0.8-dB polarization sensitivity, more than 50-dB extinction ratio, and less than 75-mA fiber-to-fiber lossless operating current.

Paper Details

Date Published: 1 September 2004
PDF: 2 pages
Opt. Eng. 43(9) doi: 10.1117/1.1777587
Published in: Optical Engineering Volume 43, Issue 9
Show Author Affiliations
Shurong Wang, National Research Ctr. of Optoelectronic Technolog (China)
Hongliang Zhu, National Research Ctr. of Optoelectronic Technolog (China)
Baojun Wang, National Research Ctr. of Optoelectronic Tech (China)
Zhihong Liu, National Research Ctr. of Optoelectronic Technolog (China)
Ying Ding, National Research Ctr. of Optoelectronic Technolog (China)
Lingjuan Zhao, National Research Ctr. of Optoelectornic Technolog (China)
Fan Zhou, National Research Ctr. of Optoelectronic Technolog (China)
Lufeng Wang, National Research Ctr. of Optoelectornic Technolog (China)
Wei Wang, National Research Ctr. of Optoelectronic Technolog (China)


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