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Optical Engineering

AlGaAsSb/InGaAsSb phototransistors for 2-μm remote sensing applications
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Paper Abstract

Two-micron detectors are critical for atmospheric CO2 profiling using the lidar technique. InGaAs and HgCdTe detectors are commercially available for this wavelength but they lack sufficient gain, which limits their detectivity. The characterization results of a novel AlGaAsSb/InGaAsSb phototransistor for 2-μm application are reported. The device was developed by AstroPower, Inc. for NASA Langley Research Center. Spectral response measurements showed the highest responsivity in a 1.9- to 2.1-μm region with a maximum value of 2650 A/W at 2 μm. A 2-μm detectivity of 3.9×1011 cm Hz1/2/W was obtained, which corresponds to noise equivalent power of 4.6×10–14 W/Hz1/2.

Paper Details

Date Published: 1 July 2004
PDF: 4 pages
Opt. Eng. 43(7) doi: 10.1117/1.1760085
Published in: Optical Engineering Volume 43, Issue 7
Show Author Affiliations
Tamer F. Refaat, Science and Technology Corp. (United States)
M. Nurul Abedin, NASA Langley Research Ctr. (United States)
Oleg V. Sulima, AstroPower Inc. (United States)
Syed Ismail, NASA Langley Research Ctr. (United States)
Upendra N. Singh, NASA Langley Research Ctr. (United States)

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