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Optical Engineering

Characterization of InGaSb/GaSb p-n photodetectors in the 1.0- to 2.4-µm wavelength range
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Paper Abstract

Optical and electrical characteristics of InGaSb p-n photodetectors are presented at different temperatures. The device structures were grown on GaSb substrates using organic metal vapor phase epitaxy. Spectral calibration indicates peak responsivity around 2 µm, equivalent to 58% quantum efficiency, with 2.3-µm cutoff at room temperature. Reducing the device temperature increases the responsivity and shifts the cutoff wavelength to a shorter value. Current voltage measurements at different temperatures indicate that tunneling is the primary leakage current mechanism. Assuming Johnson limited performance, detectivity calculations resulted in 4×1010 cm Hz1/2/W indicating that InGaSb is a superior material for 2-µm detection applications.

Paper Details

Date Published: 1 May 2004
PDF: 2 pages
Opt. Eng. 43(5) doi: 10.1117/1.1695566
Published in: Optical Engineering Volume 43, Issue 5
Show Author Affiliations
Tamer F. Refaat, Science and Technology Corp. (United States)
M. Nurul Abedin, NASA Langley Research Ctr. (United States)
Ishwara B. Bhat, Rensselaer Polytechnic Institute (United States)
Partha S. Dutta, Rensselaer Polytechnic Institute (United States)
Upendra N. Singh, NASA Langley Research Ctr. (United States)

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