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Journal of Micro/Nanolithography, MEMS, and MOEMS

Global critical dimension uniformity improvement for mask fabrication with negative-tone chemically amplified resists by zone-controlled postexposure bake
Author(s): Lothar Berger; Peter Dress; Thomas M. Gairing; Chia-Jen Chen; Ren-Guey Hsieh; Hsin-Chang Lee; Hung-Chang Hsieh
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Paper Abstract

The multizone hotplate approach of the APB5500 bake system achieves temperature uniformity significantly superior to conventional bake tools, resulting in unmatched global critical dimension (CD) uniformity from the postexposure bake (PEB) process. Progress toward 65-nm next-generation lithography, however, requires the application of negative-tone chemically amplified resists (nCARs) like NEB22. This nCAR is characterized to show a strong sensitivity to postexposure delay (PED) in vacuum during electron-beam writing of 0.5 nm/h, and also a strong PEB sensitivity of 7.8 nm/°C, both resulting in systematic CD errors. These CD errors are compensated with the APB5500 bake system during PEB by automatically applying an appropriate nonuniform temperature profile. This temperature profile is calculated by an algorithm considering the resist and mask heat transfer properties. A CD uniformity improvement from 8.9 to 6.7 nm total range (≈25%) on a state of the art production mask is achieved.

Paper Details

Date Published: 1 April 2004
PDF: 9 pages
J. Micro/Nanolith. 3(2) doi: 10.1117/1.1683338
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 3, Issue 2
Show Author Affiliations
Lothar Berger, STEAG HamaTech AG (Germany)
Peter Dress, STEAG HamaTech AG (Germany)
Thomas M. Gairing, STEAG HamaTech AG (Germany)
Chia-Jen Chen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Ren-Guey Hsieh, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Hsin-Chang Lee, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Hung-Chang Hsieh, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)

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