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Journal of Micro/Nanolithography, MEMS, and MOEMS

Mask error tensor and causality of mask error enhancement for low-k1 imaging: theory and experiments
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Paper Abstract

Three important concepts about the mask error enhancement factor (MEEF) are proposed. From the definition of MEEF, it could be derived as a function of the image log slope and the aerial image variation caused by mask critical dimension (CD) errors. Second, a mask error common window indicator (MECWIN) is proposed to evaluate the MEEF and mask CD specification by knowing the wafer CD tolerance. This concept is used to define the mask CD specification without any ambiguity. Finally, we describe the complex 2-D response to the mask-making error around the line end by a mask error enhancement tensor. Both theoretical derivations and experiments to justify the theory are presented.

Paper Details

Date Published: 1 April 2004
PDF: 7 pages
J. Micro/Nanolith. 3(2) doi: 10.1117/1.1669508
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 3, Issue 2
Show Author Affiliations
Chun-Kuang Chen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Tsai-Sheng Gau, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Jaw-Jung Shin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Ru-Gun Liu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Shinn-Sheng Yu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Anthony Yen, Cymer, Inc. (United States)
Burn-Jeng Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)


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