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Optical Engineering

Ultrafast laser-induced crystallization of amorphous silicon films
Author(s): Tae Y. Choi; David J. Hwang; Constantine P. Grigoropoulos
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Paper Abstract

Ultrashort pulsed laser irradiation is used to crystallize 100-nm amorphous-silicon (a-Si) films. The crystallization process is observed by time-resolved pump-and-probe reflection imaging in the range of 0.2 ps to 100 ns. The in-situ images, in conjunction with postprocessed scanning electron microscopy (SEM) and atomic force microscopy (AFM) mapping of the crystallized structure, provide evidence for nonthermal ultra-fast phase transition and subsequent surface-initiated crystallization.

Paper Details

Date Published: 1 November 2003
PDF: 6 pages
Opt. Eng. 42(11) doi: 10.1117/1.1617312
Published in: Optical Engineering Volume 42, Issue 11
Show Author Affiliations
Tae Y. Choi, Swiss Federal Institute of Technology (Switzerland)
David J. Hwang, Univ. of California/Berkeley (United States)
Constantine P. Grigoropoulos, Univ. of California/Berkeley (United States)

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