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Journal of Micro/Nanolithography, MEMS, and MOEMS

Fabrication of high-fill-factor photonic crystal devices on silicon-on-insulator substrates
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Paper Abstract

Optimization of the photonic bandgap in finite-height photonic crystal (PhC) slab structures requires high-fill-factor lattices. We present a method for fabrication of high-fill-factor PhC devices in silicon-on-insulator (SOI) substrates using electron-beam lithography and high-aspect-ratio reactive-ion etching (RIE). We achieve 8:1 aspect-ratio PhC structures with 60-nm vertical membrane walls using a custom deep reactive-ion etching process in a conventional low-end RIE with patterned resist as the only etch mask. We present examples of various PhC devices fabricated using this method including a high-efficiency coupling structure for PhC waveguides.

Paper Details

Date Published: 1 October 2003
PDF: 7 pages
J. Micro/Nanolith. MEMS MOEMS 2(4) doi: 10.1117/1.1610477
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 2, Issue 4
Show Author Affiliations
Sriram Venkataraman, Univ. of Delaware (United States)
Janusz A. Murakowski, Univ. of Delaware (United States)
Thomas N. Adam, Univ. of Delaware (United States)
James Kolodzey, Univ. of Delaware (United States)
Dennis W. Prather, Univ. of Delaware (United States)

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