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Optical Engineering

1.55-μm silicon-based reflection-type waveguide-integrated thermo-optic switch
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Paper Abstract

A novel rib waveguide-integrated switch is proposed and theoretically discussed. The device is based on the total internal reflection phenomenon (TIR) and the thermo-optic effect (TOE) in hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si). It takes advantage of a bandgap-engineered a-Si:H layer to explore the properties of an optical interface between materials showing similar refractive indexes but different thermo-optic coefficients. In particular, thanks to modern plasma-enhanced chemical vapor deposition techniques, the refractive index of the amorphous film can be properly tailored to match that of c-Si at a given temperature. TIR may be achieved, however, at the interface by acting on the temperature, because the two materials have different thermo-optic coefficients. The switch is integrated in a 4-μm-wide and 3-μm-thick single-mode rib waveguide. The substrate is a silicon-on-insulator (SOI) wafer with an oxide thickness of 500 nm. The active middle region optimal length is 282 μm. The device performance is analyzed at a wavelength of 1.55 μm. It is shown that the output crosstalk and insertion loss are less than –26 and 3.5 dB, respectively.

Paper Details

Date Published: 1 October 2003
PDF: 6 pages
Opt. Eng. 42(10) doi: 10.1117/1.1601235
Published in: Optical Engineering Volume 42, Issue 10
Show Author Affiliations
Francesca L.B. Cantore, Univ. degli Studi Mediterranea di Reggio Calabria (Italy)
Francesco Giuseppe Della Corte, Univ. degli Studi Mediterranea di Reggio Calabria (Italy)


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