Share Email Print
cover

Optical Engineering

Model for illumination-dependent trap occupancy in optically biased GaN metal-semiconductor field effect transistor for improved electrical characteristics
Author(s): Adarsh Singh; Mridula Gupta; R.S. Gupta
Format Member Price Non-Member Price
PDF $20.00 $25.00

Paper Abstract

The effect of wavelength of illumination on the trap occupancy of an optically biased GaN metal-semiconductor field effect transistor (MESFET) for its improved electrical characteristics is presented. The model evaluates the Id to Vd characteristics and transconductance of the device for the cases of light turning both on and off at a reference time t = 0. The photovoltaic effect across the Schottky junction and the depletion width modulation in the active layer are taken into account along with the gate-length modulation and parasitic source and drain resistances. It is shown that the trap-related degradation of the drain characteristics could be overcome when the device is used under illumination with light acting as a dual gate.

Paper Details

Date Published: 1 September 2003
PDF: 5 pages
Opt. Eng. 42(9) doi: 10.1117/1.1598962
Published in: Optical Engineering Volume 42, Issue 9
Show Author Affiliations
Adarsh Singh, Univ. of Delhi South Campus (India)
Mridula Gupta, Univ of Delhi South Campus (India)
R.S. Gupta, Univ of Delhi South Campus (India)


© SPIE. Terms of Use
Back to Top