Share Email Print

Journal of Micro/Nanolithography, MEMS, and MOEMS

Advanced inspection technique for deep-submicron and high-aspect-ratio contact holes
Author(s): Miyako Matsui; Mari Nozoe; Keiko Arauchi; Atsuko Takafuji; Hidetoshi Nishiyama; Yasushi Goto
Format Member Price Non-Member Price
PDF $20.00 $25.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We developed a technique using electron beams for inspecting contact holes immediately after dry etching and detecting incomplete contact failures. Wafers with deep-submicron contact holes that had high aspect ratios of 10 could be detected during practical inspection time by controlling the charging effect on the wafer surfaces. Measurements of the energy distribution in the secondary electrons exhausted from the bottom of the holes indicated that they were accelerated by the charge-up voltage on the wafer surfaces. Our analysis showed that high-density electron beams must be used to charge the surfaces when the aspect ratio is high. The minimum thickness of the residual SiO2 that could be detected at the bottom of the contact holes was 2 nm using an aspect ratio of 8. Applying this mechanism to optimize the dry etching process in semiconductor manufacturing showed that we could achieve reliable process control.

Paper Details

Date Published: 1 July 2003
PDF: 6 pages
J. Micro/Nanolith. MEMS MOEMS 2(3) doi: 10.1117/1.1585062
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 2, Issue 3
Show Author Affiliations
Miyako Matsui, Hitachi Ltd. (Japan)
Mari Nozoe, Hitachi Ltd. (Japan)
Keiko Arauchi, Hitachi ULSI Systems (Japan)
Atsuko Takafuji, Hitachi Ltd. (Japan)
Hidetoshi Nishiyama, Hitachi Ltd. (Japan)
Yasushi Goto, Hitachi Ltd. (Japan)

© SPIE. Terms of Use
Back to Top