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Journal of Micro/Nanolithography, MEMS, and MOEMS

Comparison of extreme ultraviolet reflectance measurements
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Paper Abstract

The semiconductor industry has pushed linewidths on integrated-circuit chips down to 100 nm. To pattern ever finer lines by use of photolithography, the industry is now preparing the transition to extreme ultraviolet lithography (EUVL) at 13 nm by 2007. As EUVL matures, the requirements for the accuracy of reflectivity and wavelength measurements are becoming tighter. A high absolute accuracy and worldwide traceability of reflectance measurements are mandatory for worldwide system development. A direct comparison of EUV reflectance measurements at the Advanced Light Source (ALS) Center for X-Ray Optics (CXRO) and Physikalisch-Technische Bundesanstalt (PTB) yield perfect agreement within the mutual relative uncertainties of 0.14% for reflectance and 0.014% for wavelength.

Paper Details

Date Published: 1 July 2003
PDF: 3 pages
J. Micro/Nanolith. MEMS MOEMS 2(3) doi: 10.1117/1.1583735
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 2, Issue 3
Show Author Affiliations
Frank Scholze, Physikalisch-Technische Bundesanstalt (Germany)
Johannes F. Tümmler, Physikalisch-Technische Bundesanstalt (Germany)
Eric M. Gullikson, Lawrence Berkeley National Lab. (United States)
Andy Aquila, Lawrence Berkeley National Lab. (United States)

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