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Optical Engineering

Theoretical analysis of Si1–x–yGexCy near-infrared photodetectors
Author(s): Baojun Li; Soojin Chua; Eugene A. Fitzgerald
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Paper Abstract

A near-infrared waveguide photodetector in a Si-based ternary Si1–x–yGexCy alloy is analyzed theoretically and the simulation results are obtained for 0.85- to 1.06-μm wavelength fiber optic interconnection system applications. Two sets of detectors with active absorption layer compositions of Si0.79Ge0.2C0.01 and Si0.70Ge0.28C0.02 are designed. The active absorption layer has a thickness of 120 to 450 nm. The external quantum efficiency can reach ~3% with a cut-off wavelength of around 1.2 μm.

Paper Details

PDF: 7 pages
Opt. Eng. 42(7) doi: 10.1117/1.1578085
Published in: Optical Engineering Volume 42, Issue 7, July 2003
Show Author Affiliations
Baojun Li, Zhongshan Univ. (China)
Soojin Chua, Institute of Materials Research and Engineering (Singapore)
Eugene A. Fitzgerald, AmberWave Systems Corp. (United States)

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