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Journal of Micro/Nanolithography, MEMS, and MOEMS

Predicting overlay performance for electron projection lithography masks
Author(s): Phillip L. Reu; Cheng-Fu Chen; Roxann L. Engelstad; Edward G. Lovell; Michael J. Lercel; Obert R. Wood; R. Scott Mackay
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Paper Abstract

Minimizing mask-level distortions is critical to the success of electron projection lithography (EPL) in the sub-100-nm regime. A number of possibilities exist to reduce mask-fabrication and pattern-transfer distortion including subfield correction, "dummy" patterns, pattern splitting, and film stress control. Finite element modeling was used to illustrate the advantages and capabilities of these correction schemes for a 100-mm stencil mask with 1-mm×1-mm membrane windows. Static-random-access-memory-type circuit features, including both the interconnect and contact levels, were used, to simulate realistic circuit layouts with both cross-mask and intra-membrane pattern density gradients. With such correction techniques, it is possible to reduce the EPL mask-level distortions for "worst-case" mixed pattern types to less than 1.0 nm.

Paper Details

Date Published: 1 April 2003
PDF: 9 pages
J. Micro/Nanolith. MEMS MOEMS 2(2) doi: 10.1117/1.1563646
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 2, Issue 2
Show Author Affiliations
Phillip L. Reu, Univ. of Wisconsin/Madison (United States)
Cheng-Fu Chen, Univ. of Wisconsin/Madison (United States)
Roxann L. Engelstad, Univ. of Wisconsin/Madison (United States)
Edward G. Lovell, Univ. of Wisconsin/Madison (United States)
Michael J. Lercel, IBM Corp. (United States)
Obert R. Wood, International SEMATECH (United States)
R. Scott Mackay, Photronics, Inc. (United States)

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