Share Email Print
cover

Journal of Micro/Nanolithography, MEMS, and MOEMS

Simulation model of in-plane distortion in extreme ultraviolet lithography mask during chucking without friction
Author(s): Akira Chiba; Eiichi Hoshino; Minoru Sugawara; Hiromasa Yamanashi; Kazuya Ota; Taro Ogawa; Shinji Okazaki
Format Member Price Non-Member Price
PDF $20.00 $25.00

Paper Abstract

In-plane displacement (IPD) of an extreme ultraviolet lithography (EUVL) mask in a flat state during the electrostatic chucking stage without friction is examined through simulations. For predicting IPD of an EUVL mask, a simulation model based on two-dimensional plane stress theory is developed. With regard to the absorber patterns both square and rectangle, film stress and absorber coverage dependency of IPD is investigated. Mitigation of IPD to the 1-nm level is possible by reducing absorber stress to ∓100 MPa. The change in surface height caused by absorber film stress of ∓500 MPa is less than 1 nm. The influence of change in surface height on image placement shift was found to be negligible because the image placement shift is 0.03 nm.

Paper Details

Date Published: 1 April 2003
PDF: 8 pages
J. Micro/Nanolith. 2(2) doi: 10.1117/1.1563645
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 2, Issue 2
Show Author Affiliations
Akira Chiba, Association of Super-Advanced Electronics Techn. (Japan)
Eiichi Hoshino, Association of Super-Advanced Electronics Techn. (Japan)
Minoru Sugawara, Association of Super-Advanced Electronics Techn. (Japan)
Hiromasa Yamanashi, Association of Super-Advanced Electronics Techn. (Japan)
Kazuya Ota, Association of Super-Advanced Electronics Techn. (Japan)
Taro Ogawa, Association of Super-Advanced Electronics Techn. (Japan)
Shinji Okazaki, Association of Super-Advanced Electronics Techn. (Japan)


© SPIE. Terms of Use
Back to Top