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Journal of Micro/Nanolithography, MEMS, and MOEMS

Contrast analysis and optimization for resolution enhancement technique
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Paper Abstract

We propose a framework for the analysis and characterization of the efficacy of any resolution enhancement technique (RET) in lithography. The method is based on extracting a distribution of the image log slope (ILS) for a given layout under a predefined set of optical conditions. This distribution is then taken as the optical signature for the image local contrast of the design. The optical signature can be created for an entire layout, or only for certain cells believed to be problematic. Comparisons can be made between the optical signatures generated using different illumination/RET strategies. We have used this method to evaluate and optimize two different RET approaches: subresolution assist features (SRAF) and double-exposure dipole illumination.

Paper Details

Date Published: 1 April 2003
PDF: 10 pages
J. Micro/Nanolith. MEMS MOEMS 2(2) doi: 10.1117/1.1562931
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 2, Issue 2
Show Author Affiliations
Juan Andres Torres, Mentor Graphics Corp. (United States)
Yuri Granik, Mentor Graphics Corp. (United States)
Franklin M. Schellenberg, Mentor Graphics Corp. (United States)

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