Share Email Print
cover

Optical Engineering

Noise modeling of an InP/InGaAs heterojunction bipolar phototransistor
Author(s): P. Chakrabarti; Naveen Agrawal; Pankaj Kalra; Shishir Agrawal; Gaurav Gupta
Format Member Price Non-Member Price
PDF $20.00 $25.00

Paper Abstract

We present a theoretical analysis of the noise behavior of a heterojunction bipolar transistor (HBT) used as a three terminal (3T) photodetector. The use of a HBT in the photodetector mode can greatly simplify the fabrication of HBT-based optical receivers in the monolithic form. The present model takes into account the effect of the received light on the intrinsic parameters and various noise components of the HBT when used as a detector. The model enables one to determine the signal-to-noise ratio at the output and also the noise equivalent power of the HBT. The model has been applied for characterization of an InP/InGaAs HBT used as a 3T photodetector in the 1.55-μm wavelength region.

Paper Details

Date Published: 1 April 2003
PDF: 9 pages
Opt. Eng. 42(4) doi: 10.1117/1.1557693
Published in: Optical Engineering Volume 42, Issue 4
Show Author Affiliations
P. Chakrabarti, Banaras Hindu Univ. (India)
Naveen Agrawal, Banaras Hindu Univ. (India)
Pankaj Kalra, Banaras Hindu Univ. (India)
Shishir Agrawal, Banaras Hindu Univ. (India)
Gaurav Gupta, Banaras Hindu Univ. (India)


© SPIE. Terms of Use
Back to Top