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Optical Engineering

Semiconductor optical amplifier optical gate with graded strained bulk-like active structure
Author(s): Ruiying Zhang; Jie Dong; Zhiwei Feng; Fan Zhou; H. L. Tian; H. Y. Shu; Lingjuan Zhao; J. Bian; Wei Wang
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Paper Abstract

A novel semiconductor optical amplifier (SOA) optical gate with a graded strained bulk-like active structure is proposed. A fiber-to-fiber gain of 10 dB when the coupling loss reaches 7 dB/factet and a polarization insensitivity of less than 0.9 dB for multiwavelength and different power input signals over the whole operation current are obtained. Moreover, for our SOA optical gate, a no-loss current of 50 to 70 mA and an extinction ratio of more than 50 dB are realized when the injection current is more than no-loss current, and the maximum extinction ratio reaches 71 dB, which is critical for crosstalk suppression.

Paper Details

Date Published: 1 March 2003
PDF: 5 pages
Opt. Eng. 42(3) doi: 10.1117/1.1539053
Published in: Optical Engineering Volume 42, Issue 3
Show Author Affiliations
Ruiying Zhang, Institute of Semiconductors (China)
Jie Dong, National Research & Dev. Ctr. for Optoelectronics (China)
Zhiwei Feng, Changchun Institute of Optics and Fine Mechanics (China)
Fan Zhou, National Research & Dev. Ctr. for Optoelectronics (China)
H. L. Tian, Institute of Semiconductors (China)
H. Y. Shu, Institute of Semiconductors (China)
Lingjuan Zhao, Institute of Semiconductors (China)
J. Bian, Institute of Semiconductors (China)
Wei Wang, Institute of Semiconductors (China)


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