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Journal of Micro/Nanolithography, MEMS, and MOEMS

Compact electron-based extreme ultraviolet source at 13.5 nm
Author(s): Andre Egbert; Bjoern Mader; Boris Tkachenko; Andreas Ostendorf; Carsten Fallnich; Boris N. Chichkov; Thomas Miflalla; Max Christian Schuermann; Kai Gaebel; Guido Schriever; Uwe Stamm
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Paper Abstract

Generation of extreme ultraviolet (EUV) radiation from solid targets is studied and a compact EUV source for small-scale lithographic applications and EUV metrology is developed. This source is based on a transfer of conventional x-ray tube technology into the EUV spectral range. As in an ordinary x-ray tube, electrons are generated by a tungsten filament and accelerated in a high-voltage electric field toward a solid target. In the demonstrated "EUV tube" beryllium and silicon targets are used to generate radiation at 11.4 and 13.5 nm, respectively. The absolute conversion efficiencies into EUV photons at 13.5 nm are measured. Prospects for a further power scaling of the EUV source are discussed.

Paper Details

Date Published: 1 April 2003
PDF: 4 pages
J. Micro/Nanolith. MEMS MOEMS 2(2) doi: 10.1117/1.1532350
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 2, Issue 2
Show Author Affiliations
Andre Egbert, Laser Zentrum Hannover e.V. (Germany)
Bjoern Mader, Laser Zentrum Hannover e.V. (Germany)
Boris Tkachenko, Laser Zentrum Hannover e.V. (Germany)
Andreas Ostendorf, Laser Zentrum Hannover e.V. (Germany)
Carsten Fallnich, Laser Zentrum Hannover e.V. (Germany)
Boris N. Chichkov, Laser Zentrum Hannover e.V. (Germany)
Thomas Miflalla, JENOPTIK Mikrotechnik GmbH (Germany)
Max Christian Schuermann, JENOPTIK Mikrotechnik GmbH (Germany)
Kai Gaebel, XTREME Technologies GmbH (Germany)
Guido Schriever, XTREME Technologies GmbH (Germany)
Uwe Stamm, XTREME Technologies GmbH (Germany)

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