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Optical Engineering

Noise analysis of an optically controlled metal semiconductor field effect transistor at microwave frequencies
Author(s): P. Chakrabarti; Badri Nath Tiwari; Suman Kumar
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Paper Abstract

An analytical model has been developed to theoretically examine the noise performance of an optically controlled GaAs metal semiconductor field effect transistor (MESFET) at microwave frequencies. The model enables one to characterize the device under optically controlled conditions in both linear and saturation regions. It is seen that the photogenerated carriers play a significant role in deciding the overall noise performance of the device. The output signal to noise ratio depends on the frequency of operation of the device and also on the incident optical power. The device comparatively exhibits a high value of noise equivalent power that may make it less attractive as a photodetector.

Paper Details

Date Published: 1 February 2003
PDF: 9 pages
Opt. Eng. 42(2) doi: 10.1117/1.1532332
Published in: Optical Engineering Volume 42, Issue 2
Show Author Affiliations
P. Chakrabarti, Banaras Hindu Univ. (India)
Badri Nath Tiwari, Banaras Hindu Univ. (India)
Suman Kumar, Banaras Hindu Univ. (India)


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